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| DS 75 DSA 75 DSI 75 DSAI 75 Rectifier Diode Avalanche Diode VRRM = 800-1800 V IF(RMS) = 160 A IF(AV)M = 110 A VRSM V 900 1300 1300 1700 1900 V(BR)minyx VRRM V 1300 1760 1950 V 800 1200 1200 1600 1800 Anode on stud DS 75-08B DS 75-12B DSA 75-12B DSA 75-16B DSA 75-18B Cathode on stud DSI 75-08B DSI 75-12B DSAI 75-12B DSAI 75-16B DSAI 75-18B DO-203 AB C A DS DSA A C DSI DSAI x Only for Avalanche Diodes 1/4-28UNF A = Anode C = Cathode Symbol IF(RMS) IF(AV)M PRSM IFSM Test Conditions TVJ = TVJM Tcase = 100C; 180 sine DSA(I) types, TVJ = TVJM, tp = 10 ms TVJ = 45C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 160 110 20 1400 1500 1250 1310 9800 9450 7820 7210 -40...+180 180 -40...+180 2.4-4.5 21-40 21 A A kW A A A A A2s A2s A2s A2s C C C Nm lb.in. g Features International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips q q I2t TVJ = 45C VR = 0 TVJ = TVJM VR = 0 Applications High power rectifiers Field supply for DC motors Power supplies q q q q q q TVJ www..com TVJM Tstg Md Weight Mounting torque q Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Dimensions in mm (1 mm = 0.0394") Symbol IR VF VT0 rT RthJC RthJH dS dA a Test Conditions TVJ = TVJM; VR = VRRM IF = 150 A; TVJ = 25C Characteristic Values 6 1.17 0.75 2 0.5 0.9 4.05 3.9 100 mA V V mW K/W K/W mm mm m/s2 For power-loss calculations only TVJ = TVJM DC current DC current Creepage distance on surface Strike distance through air Max. allowable acceleration Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 744 (c) 2000 IXYS All rights reserved 1-2 DS 75 DSA 75 200 A IF 150 1500 105 DSI 75 DSAI 75 typ. lim. A IFSM 50Hz, 80%VRRM A2s VR = 0 V TVJ = 45C TVJ = 180C 6 TVJ = 45C I2t TVJ= 180C TVJ= 25C 100 1000 4 500 50 TVJ = 180C 2 0 0.0 0.5 1.0 VF 1.5 V 0 10-3 104 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms10 89 t Fig. 1 Forward characteristics 200 W Fig. 2 Surge overload current IFSM: crest value, t: duration Fig. 3 I2t versus time (1-10 ms) 200 A RthJA : 150 PF 1 K/W 1.2 K/W 1.6 K/W 2 K/W 3 K/W 4 K/W IF(AV)M 150 DC 180 sin 120 60 30 100 100 50 DC 180 sin 120 60 30 50 0 0 50 www..com 100 150 IF(AV)M A 0 200 0 50 100 Tamb 0 150 C 200 0 40 80 120 160 C 200 Tcase Fig. 4 Power dissipation versus forward current and ambient temperature 1.5 K/W ZthJH 1.0 30 60 120 180 DC Fig. 5 Max. forward current at case temperature RthJH for various conduction angles d: d DC 180 120 60 30 RthJH (K/W) 0.900 1.028 1.085 1.272 1.476 0.5 Constants for ZthJH calculation: i 0.0 10-3 Rthi (K/W) 0.0731 0.1234 0.4035 0.3000 ti (s) 0.0015 0.0237 0.4838 1.5 10-2 10-1 100 101 Fig. 6 Transient thermal impedance junction to heatsink 102 t s 103 1 2 3 4 (c) 2000 IXYS All rights reserved 2-2 |
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